Working with power system design tools and in close partnership with the system design teams of VREMT (Viridi E-Mobility Technology (Ningbo) Co Ltd), the lab will host Navitas engineers, with the aim of accelerating electric vehicle (EV) power system developments using Navitas’ GaNFast power ICs and GeneSiC power MOSFETs and diodes.Īs wide-bandgap power semiconductors, GaN and SiC deliver higher efficiency at faster switching speeds, with smaller system size and lower costs than silicon chips. Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA says that on 1 November Charles (Yingjie) Zha, VP & general manager of Navitas China, and Shuibao Guo, vice general manager of VREMT of Ningbo, Zhejiang, China (a subsidiary of Geely Group that supplies electric powertrains to ZEEKR, Volvo, Polestar and Lotus), opened a joint R&D power semiconductor laboratory in Ningbo.
0 kommentar(er)
